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IonSys Overview IonSys 500
IonSys 1000 IonSys 1600
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Roth & Rau AG
SLS Solar Line Saxony
51%
Dünnschicht Solar GmbH
100%
AIS Automation GmbH
100%
Muegge-electronic GmbH
100%
Roth & Rau Microsys. GmbH
100%
Roth & Rau Italy
100%
CTF Solar GmbH
100%
Shanghai Trading Co. Ltd.
100%
Singapore Pte. Ltd.
100%
Korea Co. Ltd.
100%
Roth & Rau Ortner
100%
Switzerland AG
100%
Australia Pty Ltd.
100%
Romaric Corporation
100%
USA Inc.
100%
India Pvt. Ltd.
100%
 
01 High Tech for Surfaces
 
 
Innovative Products and Technologies for Future-Oriented Applications
 
     
IonSys Overview



Ion beam technologies are proven methods to structure, clean and smooth surfaces as well as to deposit ultra-thin coatings and coating stacks with a precision in the range of a few nanometers (for example, for the manufacture of data storage components or components in the area of precision optics. IonSys represents a series of ion-beam process systems of different size and configuration that are particularly suitable for the research & development, for the application and for the small batch production. Own application systems allow an individual process development if this is required.


Topic

IonSys 500





Ion-Beam Etching Plant

TECHNOLOGY

  • Ion milling using inert gas ions as well as reactive and chemically assisted ion beam etching (CAIBE) based on fluorine and chlorine chemistry


APPLICATION POSSIBILITIES

  • Structuring of metals, semiconductors (AIIIBV / AIIBVI) and insulators


SUBSTRATES

  • Wafers and other flat substrates having a diameter of up to 6"


PLANT PARAMETERS

  • As an alternative, deliverable with Kaufman or RF (ICP) ion beam source (beam diameter of 40 mm) or ECR ion beam source (beam diameter of 120 mm)

  • Substrate holder with continuous rotation and tilting, substrate cooling and/or heating

  • Automatic single substrate transfer or cassette load lock system with vacuum robot



Topic

IonSys 1000



Ion Beam Sputtering Plant (IBS / DIBS)

TECHNOLOGY

  • Ion beam sputtering with inert gas ions, optionally: assist mode with inert or reactive gas ions


APPLICATIONS

  • Deposition of thin coatings and multilayer structures for sensors (GMR / TMR) and optical equipment (X-ray devices, filters)


SUBSTRATES

  • Wafers and flat substrates having a diameter of up to 6"


PLANT PARAMETERS

  • ECR ion beam sources having a beam diameter of 120 mm and an in-situ adjustable beam axis for the sputtering source, and a beam diameter of 200 mm for the assist source

  • Substrate holder with continuous rotation and tilting

  • Up to 8 targets on fully automatically positionable target drum

  • Automatic single substrate transfer or cassette load lock system with vacuum robot




Topic

IonSys 1600







Large-Area Ion Beam Sputtering Plant (IBS / DIBS)

TECHNOLOGY

  • Ion beam sputtering using inert gas ions, optionally: assist mode with inert or reactive gas ions, additional linear movement of substrate vertically to the sputtering direction for the processing of large substrates


APPLICATIONS

  • Deposition of wedge coatings and multilayer structures for sensors (GMR / TMR) and optical equipment (X-ray devices, filters)


SUBSTRATES

  • Substrate size: 200 x 200 x 10 cu.mm with load -ock system

  • Substrate size: 500 x 100 x 100 cu.mm in case of manual loading


PLANT PARAMETERS

  • ECR ion beam sources having a beam diameter of 120 mm and an in-situ adjustable beam axis for the sputtering source, and a beam diameter of 200 mm for the assist source

  • Precise linear movement of the substrate holder vertically to the sputtering direction

  • Substrate holder with various additional movement options (rotate, spin, tilt) and substrate cooling/heating possibilities

  • Automatic single substrate transfer for the loading or manual substrate handling




Topic

Entrepreneur
des Jahres®
Winner 2009

Nominated for the
World Entrepreneur
of the Year 2010

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Events
16.09.2010
Anniversary "20 Years of AIS Automation Dresden"
 
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