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| Structure
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Roth & Rau AG |
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| Dünnschicht Solar GmbH |
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100% |
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| Roth & Rau Microsys. GmbH |
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100% |
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| CTF Solar GmbH |
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100% |
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| Shanghai Trading Co. Ltd. |
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100% |
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| Singapore Pte. Ltd. |
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100% |
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| Korea Co. Ltd. |
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100% |
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| Switzerland AG |
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100% |
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| Australia Pty Ltd. |
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100% |
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| USA Inc. |
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100% |
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| India Pvt. Ltd. |
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100% |
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01 |
High Tech for Surfaces
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Innovative Products and Technologies for Future-Oriented Applications |
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Ion beam technologies are proven methods to structure, clean and smooth surfaces as well as to deposit ultra-thin coatings and coating stacks with a precision in the range of a few nanometers (for example, for the manufacture of data storage components or components in the area of precision optics. IonSys represents a series of ion-beam process systems of different size and configuration that are particularly suitable for the research & development, for the application and for the small batch production. Own application systems allow an individual process development if this is required.
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Topic

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Ion-Beam Etching Plant
TECHNOLOGY
- Ion milling using inert gas ions as well as reactive and chemically assisted ion beam etching (CAIBE) based on fluorine and chlorine chemistry
APPLICATION POSSIBILITIES
- Structuring of metals, semiconductors (AIIIBV / AIIBVI) and insulators
SUBSTRATES
- Wafers and other flat substrates having a diameter of up to 6"
PLANT PARAMETERS
- As an alternative, deliverable with Kaufman or RF (ICP) ion beam source (beam diameter of 40 mm) or ECR ion beam source (beam diameter of 120 mm)
- Substrate holder with continuous rotation and tilting, substrate cooling and/or heating
- Automatic single substrate transfer or cassette load lock system with vacuum robot
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Topic

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Ion Beam Sputtering Plant (IBS / DIBS)
TECHNOLOGY
- Ion beam sputtering with inert gas ions, optionally: assist mode with inert or reactive gas ions
APPLICATIONS
- Deposition of thin coatings and multilayer structures for sensors (GMR / TMR) and optical equipment (X-ray devices, filters)
SUBSTRATES
- Wafers and flat substrates having a diameter of up to 6"
PLANT PARAMETERS
- ECR ion beam sources having a beam diameter of 120 mm and an in-situ adjustable beam axis for the sputtering source, and a beam diameter of 200 mm for the assist source
- Substrate holder with continuous rotation and tilting
- Up to 8 targets on fully automatically positionable target drum
- Automatic single substrate transfer or cassette load lock system with vacuum robot
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Topic

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Large-Area Ion Beam Sputtering Plant (IBS / DIBS)
TECHNOLOGY
- Ion beam sputtering using inert gas ions, optionally: assist mode with inert or reactive gas ions, additional linear movement of substrate vertically to the sputtering direction for the processing of large substrates
APPLICATIONS
- Deposition of wedge coatings and multilayer structures for sensors (GMR / TMR) and optical equipment (X-ray devices, filters)
SUBSTRATES
- Substrate size: 200 x 200 x 10 cu.mm with load -ock system
- Substrate size: 500 x 100 x 100 cu.mm in case of manual loading
PLANT PARAMETERS
- ECR ion beam sources having a beam diameter of 120 mm and an in-situ adjustable beam axis for the sputtering source, and a beam diameter of 200 mm for the assist source
- Precise linear movement of the substrate holder vertically to the sputtering direction
- Substrate holder with various additional movement options (rotate, spin, tilt) and substrate cooling/heating possibilities
- Automatic single substrate transfer for the loading or manual substrate handling
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Topic
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Entrepreneur
des Jahres® |
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Winner 2009
Nominated for the
World Entrepreneur
of the Year 2010
official
site |
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Events |
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16.09.2010 |
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Anniversary "20 Years of AIS Automation Dresden"
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