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Roth & Rau AG |
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| Dünnschicht Solar GmbH |
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100% |
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| Roth & Rau Microsys. GmbH |
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100% |
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| CTF Solar GmbH |
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100% |
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| Shanghai Trading Co. Ltd. |
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100% |
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| Singapore Pte. Ltd. |
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100% |
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| Korea Co. Ltd. |
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100% |
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| Switzerland AG |
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100% |
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| Australia Pty Ltd. |
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100% |
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| USA Inc. |
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100% |
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| India Pvt. Ltd. |
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100% |
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01 |
High Tech for Surfaces
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Innovative Products and Technologies for Future-Oriented Applications |
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The MicroSys plant concept represents a versatilely applicable platform for plasma-assisted etching and coating processes such as RIE and PECVD as they are used in many industrial sectors such as microelectronics, microsystems engineering, nanotechnology, optics, medical engineering and many other sectors.
Depending on the layout of the plant and on the type of the process, the processable substrate sizes are in a diameter range from 150 mm to 300 mm. The plants are equipped with state of the art and powerful plasma sources (ICP sources or ECR sources, parallel plate reactors) and, in particular, can be individually adapted with respect to the substrate handling.
Moreover, Roth & Rau has a comprehensive know-how in the field of etching and coating technologies.
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 Topic
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300mm Reactive Ion Etching (RIE) System
TECHNOLOGY
- RIE with fluorine or chlorine chemistry
APPLICATIONS
- RIE of Si, SiO, SiN, GaAs, metals and other materials
SUBSTRATES
- Wafers, flat substrates or substrate carriers having a diameter of up to 300 mm
PLANT PARAMETERS
- Aluminum process chamber
- 300mm ICP source in combination with RF bias
- Substrate cooling
- Substrate handling with and without carrier
- Load-lock system with automatic single wafer / single carrier transfer or cassette load-lock
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Topic
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PECVD or RIE Laboratory Equipment
TECHNOLOGY
- PECVD of Si, SiN and SiO coatings based on silane or different Si precursors (TEOS, HMDSO) and other coating materials
- RIE with fluorine chemistry
APPLICATIONS
- PECVD and RIE in laboratory scale
SUBSTRATES
- Wafers, flat substrates or substrate carriers having a diameter of up to 150 mm
PLANT PARAMETERS
- 160mm microwave (ECR) plasma source in combination with RF bias (alternatively, with parallel plate arrangement)
- Substrate cooling/heating
- Substrate handling with and without carrier
- Load-lock system with automatic single substrate transfer
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Topic
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300mm PECVD System
TECHNOLOGY
- PECVD of Si, SiN and SiO films based on silane or Si precursors (TEOS, HMDSO), DLC (Diamond-Like Carbon) on the basis of gas mixtures made of carbonic gasses, inert gasses and H2
APPLICATIONS
- Advanced research and development and small-scale batch production
SUBSTRATES
- Wafers or substrate carriers having a diameter of up to 300 mm
PLANT PARAMETERS
- RF parallel plate arrangement with adjustable electrode distance
- Substrate cooling/heating
- Substrate handling with and without carrier
- Load-lock system with automatic single substrate / single carrier transfer or vacuum robot with cassette load lock
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Topic
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PECVD Plant for Deposition of DLC (Diamond-Like Carbon) coatings (in particular, for optical applications)
TECHNOLOGY
- PECVD based on gas mixtures made of carbonic gasses, inert gasses and H2, RF parallel plate
APPLICATIONS
- Small-scale production of coatings and anti-reflection coating for optical components in the IR spectral range
SUBSTRATES
- Plane and slightly curved components or carriers with batches each having a diameter of up to 300 mm
LOAD-LOCK
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Topic
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Entrepreneur
des Jahres® |
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Winner 2009
Nominated for the
World Entrepreneur
of the Year 2010
official
site
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Events |
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16.09.2010 |
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Anniversary "20 Years of AIS Automation Dresden"
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