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| Structure
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 |
Roth & Rau AG |
 |
 |
 |
 |
 |
|
 |
 |
 |
 |
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| Dünnschicht Solar GmbH |
 |
100% |
|
|
|
 |
 |
 |
 |
 |
|
 |
 |
 |
 |
 |
|
 |
 |
 |
 |
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| Roth & Rau Microsys. GmbH |
 |
100% |
|
|
|
 |
 |
 |
 |
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|
 |
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 |
 |
 |
| CTF Solar GmbH |
 |
100% |
|
|
|
 |
 |
 |
 |
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| Shanghai Trading Co. Ltd. |
 |
100% |
|
|
|
 |
 |
 |
 |
 |
| Singapore Pte. Ltd. |
 |
100% |
|
|
|
 |
 |
 |
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| Korea Co. Ltd. |
 |
100% |
|
|
|
 |
 |
 |
 |
 |
|
 |
 |
 |
 |
 |
| Switzerland AG |
 |
100% |
|
|
|
 |
 |
 |
 |
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| Australia Pty Ltd. |
 |
100% |
|
|
|
 |
 |
 |
 |
 |
|
 |
 |
 |
 |
 |
| USA Inc. |
 |
100% |
|
|
|
 |
 |
 |
 |
 |
| India Pvt. Ltd. |
 |
100% |
|
|
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 |
|
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| |
|
01 |
High Tech for Surfaces
|
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Innovative Products and Technologies for Future-Oriented Applications |
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ECR Ion Beam Sources
PRINCIPLE
- Highly efficient electrodeless plasma excitation through Electron Cyclotron Resonance (ECR)
APPLICATIONS
- Reactive and chemically assisted ion beam etching (RIBE, CAIBE) as well as ion-beam-assisted deposition of thin coatings (IBS, IBAD)
SPECIFICATION
- UHV-compatible, flange-mounted ion beam sources
- Beam diameter of 120 / 200 mm with homogeneous and collimated beam profile
- Ion beam parameters: Up to 2.0 keV, 500 / 800 mA
- In-situ adjustment of beam axis for sputtering applications is possible
- Neutralization by means of plasma bridge neutralizer or beam switch
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Topic
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Entrepreneur
des Jahres® |
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Winner 2009
Nominated for the
World Entrepreneur
of the Year 2010
official
site |
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Events |
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16.09.2010 |
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Anniversary "20 Years of AIS Automation Dresden"
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