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Ion Beam Etching Ion beam deposition of molybdenum...
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01 High Tech for Surfaces
 
 
Innovative Products and Technologies for Future-Oriented Applications
 
     
Ion Beam Etching

GaAlN structures (courtesy of University Stuttgart)

AIIIBV semiconductor materials – CAIBE (Chemically Assisted Ion Beam Etching)

  • CAIBE of GaAs, GaN, GaAlN, lnP and similar materials

  • Chlorine chemistry

  • Adjustable and smooth surfaces

  • Typical etching rates for GaN 20...30 nm/min.




Topic

Ion beam deposition of molybdenum / silicon multilayers


  • DIBS (Dual Ion Beam Sputtering)

  • Periodicity: 6.7 nm

  • Smooth surfaces (RMS: 0.17 nm)

  • In-situ process control by means of ellipsometry and reflectometry




Topic

Entrepreneur
des Jahres®
Winner 2009

Nominated for the
World Entrepreneur
of the Year 2010

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16.09.2010
Anniversary "20 Years of AIS Automation Dresden"
 
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