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SiNA® - General features Throughput (referring to 70 nm...
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01 High Tech for Surfaces
 
 
Innovative Products and Technologies for Future-Oriented Applications
 
     
SiNA® - General features

SINA® L

Waver



About 5 years ago, silicon nitride (SiN) coatings deposited by means of PECVD (Plasma Enhanced Chemical Vapor Deposition) were introduced as standard for the anti-reflection coating and passivation of silicon solar cells. At that, through the surface and volume passivation of the silicon wafer, a significant increase of the efficiency of the solar cells in a range of more than 10% is reached.

With the SiNA® plant series, Roth & Rau offers SiN coating plants for various capacity requirements from the pilot manufacture (< 5 MWp) up to the fully automatic mass production (up to 100 MWp). The plants work in the in-line mode where the silicon wafers are processed on flat carriers. The coating deposition is realized in a continuous process in a silane/ammonia plasma using plasma sources specifically developed for this process. Thanks to a careful process optimization and experiences of many years under production conditions, the SiN coatings show very good passivation properties and an excellent homogeneity of coating thickness and optical parameters. The method is flexible with respect to wafer formats and materials (excellently suitable for thin wafers too) and is characterized by good automation possibilities, low operating costs and a high system availability.

Downloads:

beispiel.pdf (255 kB)
Emitter Passivation Properties of PECVD Silicon Nitride on Silicon Solar Cells Jason Tan et al

Industrial_PECVD_Silicon_Nitride_b.pdf (111 kB)
Industrial PECVD Silicon Nitride - Surface and Bulk Passivation of Silicon Wafers Saul Winderbaum et al

Characterisation_of_Industrial_Scale.pdf (435 kB)
Characterisation of Industrial-Scale Remote PECVD SiN Depositions Saul Winderbaum et al

Large_scale_industrial_ silicon_nitride_deposition.pdf (0 kB)
Large scale industrial silicon nitride deposition at photovoltaic cells with linear microwave plasma sources Hermann Schlemm et al

On_Combinig_Surface_and_Bulk_Passivation.pdf (243 kB)
On Combinig Surface and Bulk Passivation of SiNx - H Layers for mc-Si Solar Cells W Soppe et al

Passivation_of_Crystalline_Silicon_using_Silicon.pdf (333 kB)
Passivation of Crystalline Silicon using Silicon Nitride Andrés Cuevas et al

A_High_Throughput_PECVD_Reactor.pdf (293 kB)
A High Throughput PECVD Reactor for Deposition of Passivating SiN Layers Wim Soppe et al

Links:

Topic

Throughput (referring to 70 nm film thickness and refractive index 2,1)

ModelWafer size
mm
Throughput(brutto) wafer/hWafers per
carrier
Coating
surface
mm²
Cycle
time
s
Max.
plasma
sources
SiNA XS12548012532x397903
 1563609490x490903
SiNA L
ext.
(4ps)
125180036802x802724
 156125025822x822724
SiNA L
ext.
(6ps)
125235636802x802556
 156163625822x822556
SiNA L
ext.
turbo
125288036802x802456
 156200025822x822456
SiNA XXL1253546661477x802678
 1562418451486x822678
SiNA XXL
turbo
1254950661477x8024816
 1563375451486x8224816


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